斉藤 光史
氏名 斉藤 光史サイトウ ミツフミ / SAITO Mitsufumi
職位 助教
所属 電子情報システム工学科
電子情報システム工学域
年報
研究紹介

新規動作原理デバイス開発を目指した、ナローギャップ半導体および新奇層状物質中の電子スピン制御に関する研究を行っています。

専門・研究分野 半導体デバイス
ヘテロエピタキシャル結晶成長
ナローギャップ半導体
層状物質
最終学歴・学位 富山大学理工学研究科 博士後期課程 物質科学専攻
研究テーマ InSb/Siヘテロエピタキシャル成長
スピントロニクス材料開発
層状物質材料開発
研究キーワード ヘテロエピタキシャル成長, MBE, ナローギャップ半導体デバイス, スピントロニクス, InSb, 層状物質
研究業績・著書・論文、その他それに準じる業績 学術論文
  
[1] Three-dimensional networks of superconducting NbSe2 flakes with nearly isotropic large upper critical field
Togo Takahashi, Chisato Ando, Mitsufumi Saito, Yasumitsu Miyata, Yusuke Nakanishi, Jiang Pu and Taishi Takenobu
NPJ 2D Mater. Appl. 5, 31, (2021)

[2] A Scenario for Device Simulation with Physics-Based Modeling and Terahertz Dynamics of Semiconductor Resonant Tunneling Diodes toward Ultrawideband Wireless Communication
Kiyoto ASAKAWA, Masahito NAKAMURA, Toshimichi OKAZAKI, Atsushi TASHIRO, Shin YAMASHITA, Mitsufumi SAITO, Michihiko SUHARA
IEICE Trans. Electron. J96-C No. 6 (2013) pp. 140-148

[3] A novel method to clarify nonlinear equivalent circuit of tunnel diodes by extracting rate constants for nonequibrium electrons
Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara
Phys. Stat. Sol. (c) 9, No.2 (2012) pp. 278-281

[4] Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submillimeter-waves
Masahito Nakamura, Satoshi Takahai, Mitsufumi Saito, Michihiko Suhara
Phys. Stat. Sol. (c) 9, No.2 (2012) pp. 377-380.

[5] Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode
Masanari Fujita, Mitsufumi SAITO, Michihiko Suhara
IEICE Trans. Electron. E95 (2012) pp. 871-878

[6] Time-Domain Analysis of Large-Signal-Based Nonlinear Models for a Resonant Tunneling Diode with an Integrated Antenna
Kiyoto ASAKAWA, Yosuke ITAGAKI, Hideaki SHIN-YA, Mitsufumi SAITO,
Michihiko SUHARA
IEICE Trans. Electrion. E95 (2012) pp. 1376-1384

[7] Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes
Nobuhiko TANAKA, Mitsufumi SAITO, Michihiko SUHARA
IEICE Trans. Electron. E94 (2011) pp. 820-825

[8] Equivalent circuit model of triple-barrier resonant tunneling diodes monolithically integrated with bow-tie antennas and analysis of rectification properties towards ultra wideband terahertz detections
Satoshi Takahagi Hideaki Shin-ya, Kiyoto Asakawa, Mitsufumi Saito
and Michihiko Suhara
Jpn. J. Appl. Phys. 50 (2011) 01BG01

[9] InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer
M. Mori, S. Khamseh T. Iwasugi, K. Nakatani, K. Murata, M. Saito, K. Maezawa
Physics Procedia 3 (2010) pp. 1335-1339

[10] Heteroepitaxial growth of InSb films on the pattered Si(001) substrate
T. Iwasugi, M. Mori, H. Igarashi, K. Murata, M. Saito, K. Maezawa
Physics Procedia 3 (2010) pp. 1329-1333

[11] Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi-layer on a Si(111) substrate
Mitsufumi Saito, Masayuki Mori, Koji Ueda, Koichi Maezawa
Phys. Stat. Sol. (c) 6, No. 6 (2009) pp. 1497-1500.

[12] Hith-temperature growth of heteroepitaxial InSb films on Si(111) substrate via the InSb bi-layer
M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, K. Maezawa
J. Cryst. Growth 311 (2009) pp. 1692-1695.

[13] Heteroepitaxial Growth of InSb Films on V-Grooved Si(001) Substrate
Masayuki Mori, Mitsufumi Saito, Hiroki Igarashi, Tatsuya Iwasugi, Kazunori Murata, and Koichi Maezawa
e-J. Surf. Sci. Nanotech. 7 (2009) pp. 669-672.

[14] High Quality InSb Films Grown on Si(111) Substrate via InSb Bi-Layer
Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Chiei Tatsuyama, and Koichi Maezawa
e-J. Surf. Sci. Nanotech. 7 (2009) pp. 145-148.

[15] Microstructure and H2 gas sensing properties of undoped and Pd-doped SnO2 nanowires
Yanbai Shen, Toshinari Yamazaki, Zhifu Liu, Dan Meng, Toshio Kikuta, Noriyuki Nakatani, Mitsufumi Saito, Masayuki, Mori.
Sens. Actuators B 135 (2009) pp. 524-529.

[16] Heteroepitaxial InSb films grown via Si(111)-√7x√3-In surface reconstruction
M.Mori, M.Saito, K.Nagashima, K.Ueda, Y.Yamashita, C.Tatsuyama, T.Tambo,
K.Maezawa
Phys. Stat. Sol. (c) 5, No.9 (2008) pp. 2772-2774.

[17] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate
M.Saito, M.Mori, K.Maezawa
Appl. Surf. Sci., 254 (2008) pp. 6052-6054.

[18] Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via Si(111)-2x2-In surface reconstruction
M. Mori, M. Saito, Y.Yamashita, K.Nagashima, M.Hashimoto, C.Tatsuyama, T.Tambo
J. Cryst. Growth 301-302 (2007) pp. 207-211.

[19] Formation of nanoclusters containing In and Sb atoms
M. Saito, H. Sasaki, T. Sasaki, M. Mori, T. Tambo, C. Tatsuyama
J. Phys. IV France 132 (2006) pp. 141-145.

[20] Adsorption mechanisms of In atoms onto the Si(111)-(7×7); Clustering and substitution for Si atoms
M. Saito, Hirokazu Sasaki, Masayuki Mori, Toyokazu Tambo and Chiei Tatsuyama,
e-J. Surf. Sci. Nanotech. 3 (2005) 244-249

[21] Sb adsorption onto In nanocluster array structure formed on a Si(111)-(7×7)
M. Saito, C. Takeuchi, M. mori, T. Tambo, C. Tatsuyama,
Appl. Surf. Sci., 244 (2005) pp. 137-140.

[22] Surfactant mediated growth of Sb clusters on Si(111) surface
D. V. Gruznev, K. Ohmura, M. Saitoh, S. Tsukabayashi, T. Tambo, V. G. Lifshits, C. Tatsuyama
J. Cryst. Growth 269, (2004) pp.235-241.


国際会議論文

[1] Calculation of current-voltage characteristics with the spin-splitting induced by the Rashba effect in AlInSb/InSb resonant tunneling diodes
Shojiro Yamaguchi, Mitsufumi Saito, Michihiko Suhara
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2015),
Jeju, Korea, Jun. 29 – Jul. 1, (2015)

[2] Analysis of a possibility for double role design using a triple-barrier resonant tunneling diode for both a terahertz transmitter and a receiver
K. Asakawa, K. Imori, Y. Kato, K. Ono, T. Tokuoka, H. Yamakura, M. Saito, M. Suhara, G. Keller, W. Prost, and F. -J. Tegude
11th Topical Workshop on Heterostructure Microelectronics (TWHM2015)
Takayama, Japan, Aug. 23-26, (2015)

[3] Equivalent circuit model of teraherz rectenna to analyze zero-bias detection performances
M. Suhara, A. Tashiro, H. Yamakura, S. Hashimoto, and M. Saito
2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2014)
Kanazawa, Japan, Jul. 1-3, (2014)

[4] Electrical observation of Spin Hall Effect in the InSb layer on Si substrate
M. Saito, Y. Cho, M. Suhara
The 36th International Symposium on Optical Communications
Yamanasi, Japan, Aug. (2013)

[5] Analysis of zero bias rectenna by using a triple-brrier resonant tunneling diode and a bow-tie antenna for terahertz wave detection
A. Tashiro, T. Okazaki, M. Saito, M. Suhara, G. Keller, W. Prost, and F. J. Tegude
10th Topical Workshop on Heterostructure Microelectronics (TWHM2013),
Hakodate, Japan, Sep. 2-5 (2013)

[6] Analysis of zero bias rectenna by using a triple-barrier resonant tunneling diode and a bow-tie antenna for terahertz wave detection
A. Tashiro, T. Okazaki, M. Saito, M. Suhara, G. Keller, W. Prost, and F. J. Tegude
10th Topical Workshop on Heterostructure Microelectronics 2013 (TWHM2013)
Hakodate, Japan, Sep. 3 – 5, (2013)

[7] A possibility of frequency comb generation by using a resonant tunneling diode integrated with a self-complementary bow-tie antenna
K. Asakawa, M. Saito, and M. Suhara,
International Symposium on Frontiers in THz Technology (FTT)
Nara, Japan, Nov. 27 – 29, (2012)

[8] Analysis of monolithic integrated rectennas by using a triple-barrier resonant tunneling diode and a self-complementary antenna for zero bias detection of terahertz waves
M. Nakamura, M. Saito, and M. Suhara
International Symposium on Frontiers in THz Technology (FTT)
Nara, Japan, Nov. 27 – 29, (2012)

[9] Theoretical analysis to describe non-equilibrium transport properties and limiting factors of terahertz dynamics in resonant tunneling diodes
S. Yamashita, Y. Kurakami, M. Saito, and M. Suhara,
International Symposium on Frontiers in THz Technology (FTT)
Nara, Japan, Nov. 27 – 29, (2012)

[10] Analysis of terahertz zero bias detectiors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna
Michihiko Suhara, Satoshi Takahagi, Kiyoto Asakawa, Toshimichi Okazaki, Masahito Nakamura, Shin Yamashita, Yosuke Itagaki, Mitsufumi Saito, Anselme Tchegho, Gregor Keller, Artur Poloczek, Werner Prost, Franz-Josef Tegude
70th Device Research Conference,
Pennsylvania, United States, Jun. 18– 20 (2012)
    
[11] Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diode
M. Fujita, M. Saito, M. Suhara
2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2011),
Daejeon, Korea, Jun. 29 – Jul. 1 (2011)
  
[12] Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submillimeter-wave
M.Nakamura, S.Takahagi, M.Saito, M.Suhara
38th International Symposium on Compound Semiconductors (ISCS 2011),
Berlin, Germany, May 22-26, (2011)

[13] Evaluation of rate constants characterizing nonlinear quantum inductance and capacitance in InGaAs/InAlAs resonant tunneling diodes
K.Asakawa, Y.Kurakami, M.Saito, M.Suhara,
38th International Symposium on Compound Semiconductors (ISCS 2011),
Berlin, Germany, May 22-26, (2011)

[14] Nonlinear analysis for dynamic performance of resonant tunneling diodes
K.Asakawa, H.Shin-ya, M.Saito, M.Suhara
9th Topical Workshop on Heterostructure Microelectronincs (TWHM 2011)
Gifu, Japan, Aug. 28 – 31, (2011)

[15] Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes
N. Tanaka, M. Saito, M. Suhara,
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010),
Tokyo, Japan, Jun. 30 – Jul. 2 (2010)
  
[16] Analysis of freaquncy conversion characteristics in terahertz region by using resonant tunneling diodes integrated with ultrawide band anntenas
S. Takahagi, H. Shin-ya, K. Asakawa, M. Saito, M. Suhara,
2010 International Symposium on Organic and Inorganic, Electronic Materials and Related Nanotechnologies (EM-Nano 2010),
Toyama, Japan, June, 22 – 25, (2010)

[17] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate
M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N. B. Ahmad, K. Maezawa:
5th International Symposium on Surface Science and Nanotechnology (ISSS-5),
Tokyo, Japan, Nov. 9-13 (2008)
  
[18] High quality InSb films grown on Si(111) substrate via InSb bi-layer
M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8),
Sendai, Japan, Oct. 19-23 (2008)

[19] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer
M. Saito, M. Mori, C. Tatsuyama, K. Maezawa
8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8),
Sendai, Japan, Oct. 19-23 (2008)

[20] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer
on Si(111) substrate,
M. Saito, M. Mori, K. Ueda, K. Nakatani, K. Maezawa
35th International Symposium on Compound Semiconductors (ISCS2008),
Rust, Germany, Sep. 21-24 (2008)

[21] Heteroepitaxial growth of InSb films on a Si(111) substrate via InSb bi-layer
M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, Y. Shinmura,
K. Maezawa
15th International Conference on Molecular Beam Epitaxy (MBE2008),
Vancouver, Canada, Aug. 3-8 (2008)

[22] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate
M. Saito, M. Mori, K. Maezawa
5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
Tokyo, Japan. Nov. 12-15 (2007)

[23] Heteroepitaxial InSb films grown via Si(111)-√7x√3-In surface reconstruction
M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa,
34th International Symposium on Compound Semiconductors (ISCS2007),
Kyoto, Japan, Sep. 15-18 (2007).

[24] Heteroepitaxial growth of InSb films on a Si(111) substrate with √7x√3-In surface reconstruction
M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Tambo, C. Tatsuyama, K. Maezawa:
2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2007),
Nagano, Japan, Jun. 19-22 (2007).
  
[25] Role of In-Sb bi-layer on the heteroepitaxy of InSb films grown on a Si(111) substrate
M. Mori, M. Saito, Y. Yamashita, K. Nagashima, M. Hashimoto, T. Tambo, C. Tatsuyama
7th Russia-Japan Seminar on Semiconducter Surfaces (JRSSS-7),
Vladivostok, Russia, Sep. (2006).

[26] Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via In(2x2) surface reconstruction
M. Mori, M. Saito, Y. Yamashita, K. Nagashima, M. Hashimoto, T. Tambo, C. Tatsuyama
14th International Conference on Molecular Beam Epitaxy (MBE2007)
Waseda Univ., Tokyo, Japan, Sep. (2006)
  
[27] Formation of nanoclusters containing In and Sb atoms
M. Saito, H. Sasaki, T. Sasaki, M. Mori, T. Tambo, C. Tatsuyama
10th International Conference on the Formation of Semiconductor Interfaces (ICFSI-10),
Aix-en-Provence, France. July 3-8 (2005)
  
[28] Growth of Sb nanoclusters on In/Si(111) surfaces
D. V. Gruznev, K. Ohmura, M. Saitoh, S. Tsukabayashi, T. Tambo, V. G. Lifshits and C. Tatsuyama
6th Japan-Russia Seminar on Semiconductor Surface (JRSSS-6),
Toyama, Japan. Oct 10-17 (2004)
  
[29] Sb adsorption onto In nanocluster array structure on the Si(111)-(7x7)
M. Saito, C. Takeuchi, H. Sasaki, T. Sasaki, M. Mori, T. Tambo, C. Tatsuyama,
6th Japan-Russia Seminar on Semiconductor Surface (JRSSS-6),
Toyama, Japan. Oct 10-17 (2004)
  
[30] Sb adsorption onto Si(111)-(7x7)-In nanocluster array structure
M. Saito, C. Takeuchi, M. mori, T. Tambo, C. Tatsuyama
12th International Conference on Solid Films and Surfaces (ICSFS-12),
Hamamatsu, Japan. June 21-25 (2004)

[31] Sb interaction with Si(111)-In(√3x√3) surface: Formation of γ(√3x√3) and (√7x√7) phases
D. V. Gruznev, M. Saito, K. Ohmura, M. Mori, T. Tambo, V. G. Lifshits, C. Tatsuyama:
5th Russia-Japan Seminar on Semiconductor Surfaces (JRSSS-5),
Vladivostok, Russia, Sep. (2002).
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